View STW54NM65ND_8334669.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. december 2012 doc id 018885 rev 2 1/13 13 STW54NM65ND n-channel 650 v, 0.055 typ., 49 a fdmesh? ii power mosfet (with fast diode) in a to-247 package datasheet ? production data features the worldwide best r ds(on) * area amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resistance extremely high dv/dt and avalanche capabilities application switching applications description the device is an n-channel fdmesh? ii power mosfet that belongs to the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode. it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. figure 1. internal schematic diagram order code v dss (@tjmax) r ds(on) max. i d STW54NM65ND 710 v < 0.065 49 a to-247 1 2 3 !-v $ ' 3 table 1. device summary order code marking package packaging STW54NM65ND 54nm65nd to-247 tube www.st.com
contents STW54NM65ND 2/13 doc id 018885 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW54NM65ND electrical ratings doc id 018885 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 650 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 49 a i d drain current (continuous) at t c = 100 c 31 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 196 a p tot total dissipation at t c = 25 c 350 w dv/dt (2) 2. i sd 49 a, di/dt 600 a/ s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.36 c/w r thj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 15 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 850 mj
electrical characteristics STW54NM65ND 4/13 doc id 018885 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v dv/dt (1) 1. characteristic value at turn off on inductive load. drain source voltage slope v dd = 480 v, i d = 49 a, v gs = 10 v 30 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c = 125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 24.5 a 0.055 0.065 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 6200 218 10 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds =0 to 200 v v gs =0 - 850 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 49 a, v gs = 10 v, (see figure 14) - 188 32 100 - nc nc nc t c t r t d(off) t f crossing time rise time turn-off delay time fall time v dd = 520 v, i d = 49 a, r g = 4.7 , v gs = 10 v (see figure 17 ), (see figure 13 ) - 33 59 152 98 - ns ns ns ns r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -1.9 -
STW54NM65ND electrical characteristics doc id 018885 rev 2 5/13 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 49 196 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 49 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 49 a, di/dt = 100 a/ s v dd = 60 v figure 15 - 212 2 19 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 49 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c figure 15 - 296 4 28 ns c a
electrical characteristics STW54NM65ND 6/13 doc id 018885 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am09170v1
STW54NM65ND electrical characteristics doc id 018885 rev 2 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 50 q g (nc) (v) 200 8 100 150 10 v dd =520v i d =49a 12 300 200 100 0 400 500 v ds am09171v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am09172v1
test circuits STW54NM65ND 8/13 doc id 018885 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
STW54NM65ND package mechanical data doc id 018885 rev 2 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack? is an st trademark.
package mechanical data STW54NM65ND 10/13 doc id 018885 rev 2 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
STW54NM65ND package mechanical data doc id 018885 rev 2 11/13 figure 19. to-247 drawing 0075325_g
revision history STW54NM65ND 12/13 doc id 018885 rev 2 5 revision history table 9. document revision history date revision changes 03-jun-2011 1 initial release 19-dec-2012 2 updated title on the cover page. inserted dv/dt parameter in table 5. updated section 4: package mechanical data .
STW54NM65ND doc id 018885 rev 2 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STW54NM65ND

	To Download STW54NM65ND Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .